Heat dissipating semiconductor device packages and related methods

ABSTRACT

An embodiment of a method for making semiconductor device packages includes a heat sink matrix and a substrate. A plurality of semiconductor devices are attached to the substrate. Then, a package body is formed between the heat sink matrix and the substrate, wherein the package body encapsulates the semiconductor devices. Then, a plurality of first cutting slots is formed, wherein the first cutting slots extend through the heat sink matrix and partially extend into the package body. Then, a plurality of second cutting slots is formed, wherein the second cutting slots extend through the substrate and through the package body to the first cutting slot, thereby singulating the heat sink matrix and substrate into a plurality of individual semiconductor device packages.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Taiwan application Serial No.99138404, filed on Nov. 8, 2010, the subject matter of which isincorporated herein by reference.

TECHNICAL FIELD

The present embodiments relate to semiconductor device assembly andpackaging.

DESCRIPTION OF THE RELATED ART

In one conventional process of manufacturing semiconductor devicepackages, a semiconductor die is assembled on a substrate. Typically,this step may be performed in a matrix format where the substrate hasmultiple die sites that are eventually singulated into individualsemiconductor device packages. Next, heat sinks are attached to thedies. Then, an encapsulant or package body, which is typically a plasticmaterial, is fox over the dies and portions of the heat sinks. However,the top surfaces of the heat sinks are left exposed from the encapsulantto facilitate dissipation of heat generated by the dies duringoperation. The substrates and the package bodies are then singulated toform a plurality of semiconductor device packages. Singulation generallyinvolves sawing, which can leave metal burrs at the edges of thesingulated packages. These metal burrs may create electrical shorts inthe packages. It would thus be advantageous to reduce or eliminate theseburrs.

SUMMARY

One of the present embodiments comprises a method of making a pluralityof semiconductor device packages. The method comprises coupling aplurality of semiconductor devices to a substrate. The method furthercomprises placing the substrate in apposition with a heat sink matrix,wherein the semiconductor devices are disposed between the substrate andthe heat sink matrix. The method further comprises forming a packagebody between the heat sink matrix and the substrate, wherein the packagebody encapsulates the semiconductor devices. The method furthercomprises forming a plurality of first cutting slots extending throughthe heat sink matrix and partially extending into the package body. Themethod further comprises forming a plurality of second cutting slots.The second cutting slots extend through the substrate and into thepackage body to the first cutting slots, thereby singulating theplurality of semiconductor device packages.

Another of the present embodiments comprises semiconductor devicepackage. The package comprises a substrate including a first surface.The package further comprises a semiconductor device is attached to thefirst surface of the substrate. The package further comprises a packagebody disposed on the first surface of the substrate and covering atleast the semiconductor device. The package body includes a firstportion having a first lateral surface and a second portion having asecond lateral surface that is not coplanar with the first lateralsurface. The package further comprises a heat dissipation unit disposedon the package body. The first lateral surface is substantially coplanarwith a lateral surface of the heat dissipation unit, and the secondlateral surface is substantially coplanar with a lateral surface of thesubstrate.

Another of the present embodiments comprises a method of making aplurality of semiconductor device packages. The method comprisescoupling a plurality of semiconductor devices to a substrate. The methodfurther comprises placing the substrate in apposition with a heat sinkmatrix. The method further comprises forming a package body between theheat sink matrix and the substrate, wherein the package bodyencapsulates the semiconductor devices. The method further comprisesforming a plurality of first cuts extending through the heat sink matrixand partially extending into the package body. The method furthercomprises, after forming the plurality of first cuts, forming or placinga plurality of electrical contacts on a surface of the substrate. Themethod further comprises reflowing the plurality of electrical contacts.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1L illustrate process steps in one of the present embodimentsof making a semiconductor device package;

FIGS. 2A-2B illustrate process steps in two alternative methods ofmaking a semiconductor device package;

FIGS. 3A-3C illustrate process steps in another of the presentembodiments of making a semiconductor device package; and

FIG. 4 illustrates a top view of a heat sink matrix used in one of thepresent embodiments of making a semiconductor device package.

Common reference numerals are used throughout the drawings and thedetailed description to indicate the same elements. The presentinvention will be more apparent from the following detailed descriptiontaken in conjunction with the accompanying drawings.

DETAILED DESCRIPTION

Referring to FIG. 1A, a matrix of heat sinks 108 according to one of thepresent embodiments is illustrated. In the illustrated embodiment, theheat sink matrix 108 is a metal plate having a first surface 108 a and asecond surface 108 b opposite the first surface 108 a. The heat sinkmatrix 108 defines a plurality of heat dissipation units 108 c, or heatsinks. Each dissipation unit 108 c has a protruding element 108 d. Theshape of the protruding element may be circular (as shown in FIG. 1A),rectangular, or any other shape as preferred for given designrequirements. In the present embodiment, the protruding element 108 dreduces a distance between the semiconductor die (shown in subsequentfigures) and the heat dissipation units 108 c so that heat generated bythe semiconductor die during operation is more effectively dissipatedthrough the heat dissipation units 108 c. In some embodiments theprotruding element may contact the die.

The heat sink matrix 108 comprise a material with good thermalconductivity, such as nickel, tin, copper, iron, zinc, aluminum, alloysthereof, or any other material(s). The surfaces 108 a and 108 b of theheat sink matrix 108 may be plated, such as with a nickel layer, anickel palladium layer, or any other material(s).

Referring to FIG. 1B, a pumicing process is performed on the first andsecond surfaces 108 a, 108 b of the heat sink matrix 108 with a pumicingtool 146. The pumicing process coarsens or roughens the first and secondsurfaces 108 a, 108 b. Such roughening enhances the mating of a packagebody with the heat dissipation unit 108 c, which is a subsequent step inthe present process. The pumicing process may be performed on the firstand second surfaces 108 a, 108 b at the same time, in sequential steps,or only on one of the surfaces 108 a, 108 b (such as the first surface108 a) that will contact the subsequently formed package body.

The average roughness of the coarsened surface(s) may be larger than 2μm to enhance mating between the package body and the coarsened surface.According to a reliability test performed by the inventors, an averageroughness value of larger than 2 μm was found to strongly resist peelingof the package body from the roughened surface.

FIG. 1C illustrates a substrate 116, which will subsequently be combinedwith the heat sink matrix 108. The substrate 116 has a first surface 116a and a second surface 116 b opposite the first surface 116 a. Thesubstrate 116 has a plurality of die sites 118 a on the first surface116 a, which may be the upper surface. Each die site 118 a receives asemiconductor die 118. The dies 118/die sites 118 a may be in a stripformat or a matrix format, often referred to as a panel, or any otherformat. Together, the substrate 116 and the semiconductor dies 118 forma die/substrate assembly 112.

FIG. 1D illustrates a package mold 122, which is used in subsequentsteps of the present process. The package mold 122 includes a mold body140 having a two stage cavity 124. A first stage cavity 124 a is locatedin a lower portion of the mold body 140 and has a cavity bottom surface132. A second stage cavity 124 b is located above the first stage cavity124 a, and has a larger width than the first stage cavity 124 a. Thegreater width of the second stage cavity 124 b creates a shoulder 122 aaround the perimeter of the first stage cavity 124 a. A volume adjacentthe shoulder 122 a forms a recess 124 c. In this embodiment, a depth ofthe first stage cavity 124 a is greater than a depth of the second stagecavity 124 b, as further discussed below.

With continued reference to FIG. 1D, an alignment device 128 is disposedadjacent to the recess 124 c on the shoulder 122 a in the second stagecavity 124 b. In this embodiment, the alignment device 128 is a guidepin that protrudes from the surface 122 a, but does not extend above anupper surface of the mold body 140.

With reference to FIG. 1E, the heat sink matrix 108 is disposed in thefirst stage cavity 124 a of the package mold 122 with the first surface108 a facing out of the cavity 124 a. The second surface 108 b abuts abottom surface 132 of the first stage cavity 124 a. The heat sink matrix108 may or may not be secured to the package mold 122. For example, anadhesive, such as double-sided tape may be disposed between the secondsurface 108 b and the bottom surface 132 to hold the heat sink matrix108 in place during the molding process. A perimeter shape and perimeterdimensions of the heat sink matrix 108 are substantially equal to theshape and dimensions of the first stage cavity 124 a, but with a slightclearance such that the heat sink matrix 108 can be placed within themold body 140 without interference or binding.

With reference to FIG. 1F, the die/substrate assembly 112 is disposed inthe second stage cavity 124 b with an outer ring of the die/substrateassembly 112 abutting the shoulder 122 a. The first surface 116 a of thedie/substrate assembly 112 faces into the cavity 124 b such that thesemiconductor dies 118 face the heat sink matrix 108 with each die 118aligned one-to-one with a corresponding heat sink 108 c. There is a gapbetween each semiconductor die 118 and its corresponding heat sink 108c.

As indicated in the detail portion of FIG. 1F, the die/substrateassembly 112 includes a guide hole 136. When the die/substrate assembly112 is positioned in the package mold 122, the alignment device 128coincides with the guide hole 136 so that the die/substrate assembly 112is properly positioned in the second stage cavity 124 b. Preferably, thefit between the alignment device 128 and the guide hole 136 is close, sothat the semiconductor dies 118 are precisely positioned over theirrespective heat dissipation units 108 c.

In an alternative embodiment, the perimeter shape and perimeterdimensions of the die/substrate assembly 112 may be substantially equalto the perimeter shape and perimeter dimensions of the second stagecavity 124 b. In such an embodiment, the alignment devices 128 and theguide holes 136 may be omitted.

As discussed above, the depth of the first stage cavity 124 a is greaterthan the depth of the second stage cavity 124 b. The depth of the firststage cavity 124 a accommodates the thickness of the semiconductor dies118, any associated wire bonding, if present, and the thickness of theheat sink matrix 108, including the protruding elements 108 d, such thatthere is a gap or space (SP) between the semiconductor dies 118 andtheir respective protruding elements 108 d. However, in alternativeembodiments, the semiconductor dies 118 may contact the protrudingelements 108 d. The depth of the second stage cavity 124 b accommodatesthe thickness of the substrate 116.

FIG. 1G illustrates a clamping operation, wherein a mold 130 is appliedto the second surface 116 b of the substrate 116, clamp thedie/substrate assembly 112 to the package mold 122. The mold body 140 ofthe package mold 122 has at least one channel 148 extendingtherethrough. The channel 148 has an external orifice 148 a and aninternal orifice 148 b at the cavity bottom surface 132. Similarly, themold 130 has at least one channel 150 extending therethrough. Thechannel 150 has an external orifice 150 a and an internal orifice 150 bat a clamping region of the mold 130.

After clamping, a vacuum process is performed. The die/substrateassembly 112 is held firmly in place from inadvertent movement andvacuum forces F1, F2 are applied through the channels 148, 150. Thevacuum forces F1, F2 preserve the planarity of the heat sink matrix 108and the substrate 116 by holding them firmly against planar surfaces ofthe mold 130 and the mold body 140, thereby resisting sagging or bowingof the heat sink matrix 108 and the die/substrate assembly 112. Thevacuum forces F1, F2 are maintained through subsequent molding steps.Thus, in addition to enhancing proper alignment of the die/substrateassembly 112 with the heat sink matrix 108, the vacuum process reducesor eliminates warpage in the finished devices that may result from thesubsequent molding steps.

With reference to FIG. 1H, an encapsulant is inserted into the space SPbetween the heat sink matrix 108 and the die/substrate assembly 112. Theinsertion may comprise transfer molding, compression molding, or anyother molding technique. The encapsulant forms a package body 126, whichcovers or encapsulates the semiconductor dies 118. With reference toFIG. 1I, the package body 126, the die/substrate assembly 112 and theheat sink matrix 108 together form a matrix of packaged devices 142.

Note that in this embodiment, portions of the package body 126 areinterposed between the semiconductor dies 118 and the protrudingelements 108 d. If the X-Y dimensions of the heat sink matrix 108 aresubstantially equal to the X-Y dimensions of the first stage cavity 124a then lateral surfaces of the heat sink matrix will abut with sidewalls of the first stage cavity 124 a such that package body 126 willnot form on the lateral surfaces of the heat sink matrix 108. However,if the X-Y dimensions of the heat sink matrix are slightly less than theX-Y dimensions of the first stage cavity, then a portion of the packagebody 126 may form on one or more of the lateral surfaces of the heatsink matrix 108.

The package body 126 may comprise a material such as novolac-basedresin, epoxy-based resin, silicone-based resin or any other suitableencapsulant. The package body 126 can also be made from other dielectricmaterials, such as photoresist. The package body 126 may also includesuitable filler, such as powdered silicon dioxide or any other filler.

With reference to FIG. 1I, the matrix of packaged devices 142 has beenremoved from the package mold 122. As shown in the detail view of FIG.1I, the substrate 116 has a larger perimeter than both the package body126 and the heat sink matrix 108. The lateral surfaces of the packagebody 126 and the heat sink matrix 108 are substantially coplanar.

With reference to FIG. 1J, a first singulation is performed on thematrix of packaged devices 142. The first singulation may comprisesawing, laser cutting, abrasion, or any other singulation technique.With reference to the detail view on the left of FIG. 1J, the firstsingulation results in first cutting slots P1. The first cutting slotsP1 extend through the heat sink matrix 108 and partially through thepackage body 126. In some embodiments, the extent of the first cuttingslots P1 may be half the thickness T1 of the package body 126, as shown.With reference to the detail view on the right of FIG. 1J, the firstcutting slots P1 singulate the heat sink matrix 108 to separate the heatdissipation units 108 c from one another. However, the first cuttingslots P1 do not extend entirely through the heat sink matrix 108, sothat the matrix 108 remains intact. The advantages of the first cuttingslots P1 extending only partially through the heat sink matrix 108 arediscussed below. Two parallel first cutting slots P11 extend along onedirection (e.g. the Y-axis), and two parallel second cutting slots P12extend along a second perpendicular direction (e.g. the X-axis).

The first singulation penetrates the heat sink matrix 108 from the sideof the heat sink matrix 108. Cutting from this side advantageouslyreduces or eliminates burrs that would otherwise form on edges of thesingulated heat sinks 108 c as a result of deformation of the metal heatsink matrix 108. The burrs are reduced or eliminated because metalshavings that are produced by the cutting action of a saw blade, forexample, are pushed into the package body 126, rather than remaining onedges of the singulated heat sinks 108 c. These metal shavings are latereliminated when a second singulation takes place, as described below.

Advantageously, the cutting slots P1 don't completely penetrate thepackage body 126, thereby leaving the matrix of packaged devices 142intact, as shown in FIG. 1J. The matrix 142 facilitates preciseplacement of electrical contacts, such as solder balls, on the undividedsecond surface 116 b of the substrate 116 using automatic placingequipment. Placement of electrical contacts is described further below.

Further, the cutting step that makes the slots P1 penetrating the heatsink matrix 108 is preferably performed before a heat-reflow processfollowing a step of placing electrical contacts on the second surface116 b of the substrate 116. Performing the steps in this order canincrease the accuracy of this precision step by reducing or eliminatingwarpage of the matrix of package devices 142 that can occur duringand/or after the heat-reflow process. This advantage of the presentembodiments is discussed further below.

In another implementation, markings can be formed on the exposed secondsurface 108 b of the heat dissipation units 108 c by laser marking,stenciling, or other patterning technology. For example, a trademark orproduct model can be marked on the second surface 108 b of the heatdissipation units 108 c.

With reference to FIG. 1K, electrical contacts 120 are formed or placedon the second surface 116 b of the substrate 116. The electricalcontacts 120 may be solder balls, conductive pillars, bumps, or anyother type of conductive elements. Prior to forming the electricalcontacts 120, the matrix of packaged devices 142 may be inverted fromthe orientation shown in FIG. 1J, so that the second surface 116 b ofthe substrate 116 faces upward, as shown in FIG. 1K, or faces anydirection conducive to the formation of the electrical contacts 120.However, the inversion step may be omitted if the electrical contacts120 can be formed efficiently without inverting the matrix of packageddevices 142.

With reference to FIG. 1L, a second singulation is performed on thematrix of packaged devices 142. The second singulation may comprisesawing, laser cutting, abrasion, or any other singulation technique. Thesecond singulation creates second cutting slots P2. With reference tothe detail view of FIG. 1L, the second cutting slots P2 extend throughthe substrate 116 and into the package body 126 to join the firstcutting slots P1, thereby completing the singulation and forming aplurality of semiconductor device packages 100. Advantageously, becausethe second singulation cuts only the substrate 116 and a portion of thepackage body 126 (and not the metal heat sink matrix 108), no metalburrs are formed during the second singulation.

With continued reference to the detail view of FIG. 1L, the package body126 includes a first portion 126 a adjacent to the heat dissipationdevice 108 c and a second portion 126 b adjacent to the substrate 116.Perimeter dimensions of the first portion 126 a are less than those ofthe second portion 126 b. A lateral surface 126 s 1 of the first portion126 a is substantially coplanar with a lateral surface 108 s of the heatdissipation unit 108 c, and a lateral surface 126 s 2 of the secondportion 126 b is substantially coplanar with a lateral surface 116 s ofthe substrate 116.

With continued reference to the detail view of FIG. 1L, the width W3 ofthe first cutting slots P1 is less than the width W4 of the secondcutting slots P2. Each package body 126 thus includes a shoulder thatextends around its periphery and forms the dividing line between thefirst portion 126 a and the second portion 126 b. For each package body126, the plan area of the heat dissipation unit 108 c is smaller thanthe plan area of the substrate 116, so that the perimeter of the heatdissipation unit 108 c is offset laterally inward from the perimeter ofthe substrate 116. In an alternative embodiment (not shown), the widthW3 of the first cutting slots P1 may be smaller than the width W4 of thesecond cutting slots P2. In such an embodiment, the plan area of thesubstrate 116 is smaller than the plan area of the heat dissipation unit108 c, so that the perimeter of the substrate 116 is offset laterallyinward from the perimeter of the heat dissipation unit 108 c. In anotherembodiment (not shown), the width W3 of the first cutting slots P1 maybe substantially equal to the width W4 of the second cutting slots P2.In such an embodiment, both cutting steps could be performed with thesame saw blade in the case of a saw cut singulation. Using the same sawblade would advantageously reduce the complexity of the process, becausethere would be no need to change saw blades in between cutting steps.

FIGS. 2A-2B illustrate another advantage of the present embodiments.FIG. 2A shows the matrix of packaged devices 142 as it would look if thefirst cutting slots P1 were not formed in the matrix 142 prior toperforming the step of FIG. 1K, where the electrical contacts 120 areformed or placed on the second surface 116 b of the substrate 116.Subsequent to forming or placing the electrical contacts 120, theelectrical contacts 120 are typically reflowed. The heat of the reflowprocess warps the matrix 142 due to the differing coefficients ofthermal expansion (CTEs) of the heat sink matrix 108, the package body126, and the substrate 116, as shown in FIG. 2A. If, however, the firstcutting slots P1 are formed in the matrix 142 prior to performingreflow, the first cutting slots P1 relieve stresses in the matrix 142caused by the differing CTEs, so that little or no warpage occurs, asshown in FIG. 2B.

FIGS. 3A-3C illustrate an alternative method for packaging semiconductordevices. With reference to FIG. 3A, the heat sink matrix 108 is disposedin a cavity 224 of a package mold 222, wherein the first surface 108 aof the heat sink matrix 108 faces a bottom surface 232 of the cavity224. A vacuum force F3 holds the heat sink matrix 108 tightly againstthe cavity bottom surface 232. A packaging powder 238 is spread over thesecond surface 108 b of the heat sink matrix 108. Then, semiconductordevices 218 disposed on a to-be-packaged element 212 are pushed into thepackaging powder 238. Although not shown in FIG. 3A, the package mold222 and the element 212 may include the first and second positioningpieces 128, 136 as in the embodiment of FIG. 1F.

With reference to FIG. 3B, a clamping operation is performed. As shown,a mold 230 presses a substrate 216 of the element 212 into the packagingpowder 238 and clamps together with the package mold 222. After that,the packaging powder 238 is heated, until it melts. The liquefiedpackaging powder 238 uniformly encapsulates the semiconductor devices218. Upon cooling, the packaging powder 238 condenses as a package body.

With reference to FIG. 3C, a de-molding process is performed. Forexample, the mold 230 is removed to expose the element 212. Then, theelement 212 and the package mold 222 are separated. For example, theelement 212 may be ejected from the package mold 222 by a burst of airAl applied from beneath the element 212. After separating the element212 from the package mold 222, the steps of forming the first cuttingslots, the electrical contacts and the second cutting slots areperformed as described above, so as to form a plurality of semiconductordevice packages.

With reference to FIG. 4, in some embodiments a heat sink matrix 308used in a method of making a semiconductor device package may have aplurality of openings 310. The openings 310 may be formed by any method,such as laser cutting or etching. The openings 310 extend laterally andlongitudinally to form a square grid pattern that defines a plurality ofheat dissipation units 308 c. The openings 310 may or may not fullypenetrate the heat sink matrix 308, but even in an embodiment where theydo fully penetrate the heat sink matrix 308 the openings 310 do notextend continuously across the heat sink matrix 308, and therefore donot completely separate the heat dissipation units 308 c from oneanother. Rather, the heat sink matrix 308 remains a single piece due tothe presence of spaced tabs 309 at corners of the heat dissipation units308 c. To form the first cutting slots P1 (discussed above, but notshown in FIG. 4) in the matrix 308 of FIG. 4, the first cutting slots P1are formed along the openings 310. Since the heat sink matrix 308 of thepresent embodiment includes the openings 310, the singulation process ismore efficient because there is less material to be removed. Wear andtear on the cutting instrument can thus be reduced, prolonging itslifespan.

As discussed above, single-step singulation from the substrate sideresults in unacceptable metal burrs. Single-step singulation form theheat sink side does not result in burrs, but if the package issingulated before the electrical contacts are attached to the substrate,the electrical contacts must then be attached to singulated packages.Attaching electrical contacts to singulated packages is a verycomplicated process. If the electrical contacts are attached prior tosingulation, the subsequent reflow results in unacceptable warpage ofthe matrix due to the differing CTEs of the substrate, package body andheat sink. The present embodiments solve these problems by performing afirst partial cut through the heat sink and partially through thepackage body. The first partial cut reduces or eliminates burrs, becauseit pushes the metal flash up into the saw street. Next, the electricalcontacts are attached to the substrate, and a subsequent second cutsingulates the package. Burrs and warpage are thus reduced or eliminatedwithout any need to attach electrical contacts to singulated packages.

While the invention has been described and illustrated with reference tospecific embodiments thereof, these descriptions and illustrations donot limit the invention. It should be understood by those skilled in theart that various changes may be made and equivalents may be substitutedwithout departing from the true spirit and scope of the invention asdefined by the appended claims. The illustrations may not necessarily bedrawn to scale. There may be distinctions between the artisticrenditions in the present disclosure and the actual apparatus due tomanufacturing processes and tolerances. There may be other embodimentsof the present invention which are not specifically illustrated. Thespecification and the drawings are to be regarded as illustrative ratherthan restrictive. Modifications may be made to adapt a particularsituation, material, composition of matter, method, or process to theobjective, spirit and scope of the invention. All such modifications areintended to be within the scope of the claims appended hereto. While themethods disclosed herein have been described with reference toparticular operations performed in a particular order, it will beunderstood that these operations may be combined, sub-divided, orre-ordered to form an equivalent method without departing from theteachings of the invention. Accordingly, unless specifically indicatedherein, the order and grouping of the operations are not limitations ofthe invention.

1. A method of making a plurality of semiconductor device packages, themethod comprising: coupling a plurality of semiconductor devices to asubstrate; placing the substrate in apposition with a heat sink matrix,wherein the semiconductor devices are disposed between the substrate andthe heat sink matrix; forming a package body between the heat sinkmatrix and the substrate, wherein the package body encapsulates thesemiconductor devices; forming a plurality of first cutting slotsextending through the heat sink matrix and partially extending into thepackage body; and forming a plurality of second cutting slots, whereinthe second cutting slots extend through the substrate and into thepackage body to the first cutting slots, thereby singulating theplurality of semiconductor device packages.
 2. The method of claim 1,wherein the first cutting slots have a first width, and the secondcutting slots have a second width.
 3. The method of claim 2, wherein thefirst width is less than the second width.
 4. The method of claim 2,wherein the second width is less than the first width.
 5. The method ofclaim 2, wherein the first width is equal to the second width.
 6. Themethod of claim 1, further comprising: positioning the heat sink matrixin a cavity of a package mold; applying a vacuum force to the heat sinkmatrix to fix the heat sink matrix in the cavity; and positioning thesubstrate and the semiconductor devices in the cavity of the packagemold.
 7. The method of claim 1, further comprising attaching conductiveelements o a surface of the substrate after performing the plurality offirst cutting slots.
 8. The method of claim 7, further comprisingreflowing the conductive elements prior to forming the plurality ofsecond cutting slots.
 9. The method of claim 1, further comprisingperforming a pumicing process on the heat sink matrix to promoteadhesion to the package body.
 10. A semiconductor device package,comprising: a substrate including a first surface; a semiconductordevice is attached to the first surface of the substrate; a package bodydisposed on the first surface of the substrate and covering at least thesemiconductor device, the package body including a first portion havinga first lateral surface and a second portion having a second lateralsurface that is not coplanar with the first lateral surface; and a heatdissipation unit disposed on the package body; wherein the first lateralsurface is substantially coplanar with a lateral surface of the heatdissipation unit, and the second lateral surface is substantiallycoplanar with a lateral surface of the substrate.
 11. The semiconductordevice package of claim 10, wherein the first portion of the packagebody is laterally recessed with respect to a periphery of the substrate.12. The semiconductor device package of claim 10, wherein the secondportion of the package body is laterally recessed with respect to aperiphery of the heat dissipation unit.
 13. The semiconductor devicepackage of claim 10, wherein the package body includes a shoulder thatextends around its periphery and forms a dividing line between the firstportion and the second portion.
 14. The semiconductor device package ofclaim 10, wherein a plan area of the heat dissipation unit is smallerthan a plan area of the substrate.
 15. The semiconductor device packageof claim 10, wherein a plan area of the substrate is smaller than a planarea of the heat dissipation unit.
 16. A method of making a plurality ofsemiconductor device packages, the method comprising: coupling aplurality of semiconductor devices to a substrate; placing the substratein apposition with a heat sink matrix; forming a package body betweenthe matrix of heat sinks and the substrate, wherein the package bodyencapsulates the semiconductor devices; forming a plurality of firstcuts extending through the heat sink matrix and partially extending intothe package body; after forming the plurality of first cuts, forming orplacing a plurality of electrical contacts on a surface of thesubstrate; and reflowing the plurality of electrical contacts.
 17. Themethod of claim 16, further comprising inspecting the semiconductordevice packages for warpage after performing the reflow.
 18. The methodof claim 16, further comprising forming a plurality of second cuts,wherein the second cuts extend through the substrate and into thepackage body to the first cuts, thereby singulating the plurality ofsemiconductor device packages.
 19. The method of claim 18, furthercomprising inspecting the singulated semiconductor device packages forwarpage.
 20. The method of claim 16, wherein the plurality of first cutsreduces warpage of the semiconductor device packages that wouldotherwise result from reflowing the plurality of electrical contacts.